DocumentCode :
2884600
Title :
Competing technologies for ultrahigh-speed SRAMs and their applications
Author :
Lee, Fred
Author_Institution :
Gigabit Logic, Inc., Newbury Park, CA, USA
Volume :
XXIX
fYear :
1986
fDate :
19-21 Feb. 1986
Firstpage :
114
Lastpage :
115
Abstract :
Advanced MOS and bipolar technologies, using 
m lithography, have increased dramatically the complexity of 16K to 256K SRAMs and reduced access time to 3 to 30ns, respectively. Meanwhile, GaAs technology has produced 1 to 3ns, and 1K to 4K SRAMs. The present status and the future projections of these competing technologies will be discussed. The user\´s point-of-view assessing implementation of high speed SRAMS in a system environment will be offered.
m lithography, have increased dramatically the complexity of 16K to 256K SRAMs and reduced access time to 3 to 30ns, respectively. Meanwhile, GaAs technology has produced 1 to 3ns, and 1K to 4K SRAMs. The present status and the future projections of these competing technologies will be discussed. The user\´s point-of-view assessing implementation of high speed SRAMS in a system environment will be offered.Keywords :
CMOS logic circuits; CMOS technology; Clocks; Gallium arsenide; Random access memory; Read-write memory; Silicon; Testing; Timing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1986.1156934
Filename :
1156934
Link To Document :
