DocumentCode
2884600
Title
Competing technologies for ultrahigh-speed SRAMs and their applications
Author
Lee, Fred
Author_Institution
Gigabit Logic, Inc., Newbury Park, CA, USA
Volume
XXIX
fYear
1986
fDate
19-21 Feb. 1986
Firstpage
114
Lastpage
115
Abstract
Advanced MOS and bipolar technologies, using 
m lithography, have increased dramatically the complexity of 16K to 256K SRAMs and reduced access time to 3 to 30ns, respectively. Meanwhile, GaAs technology has produced 1 to 3ns, and 1K to 4K SRAMs. The present status and the future projections of these competing technologies will be discussed. The user\´s point-of-view assessing implementation of high speed SRAMS in a system environment will be offered.
m lithography, have increased dramatically the complexity of 16K to 256K SRAMs and reduced access time to 3 to 30ns, respectively. Meanwhile, GaAs technology has produced 1 to 3ns, and 1K to 4K SRAMs. The present status and the future projections of these competing technologies will be discussed. The user\´s point-of-view assessing implementation of high speed SRAMS in a system environment will be offered.Keywords
CMOS logic circuits; CMOS technology; Clocks; Gallium arsenide; Random access memory; Read-write memory; Silicon; Testing; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location
Anaheim, CA, USA
Type
conf
DOI
10.1109/ISSCC.1986.1156934
Filename
1156934
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