Title :
Ensemble Monte Carlo/molecular dynamics simulation of gate remote charge effects in small geometry MOSFETs
Author :
Kawashima, I. ; Kamakura, Y. ; Taniguchi, K.
Author_Institution :
Dept. of Electron. & Inf. Syst., Osaka Univ., Japan
Abstract :
We present an ensemble Monte Carlo simulation coupled with molecular dynamics method to analyze the point charge effects in small MOSFETs characteristic. The carrier mobility in MOSFETs with ultra-thin gate dielectrics is analyzed taking account of the effect of the ionized impurities in the gate electrode through the remote charge scattering. The less significant mobility degradation is observed in MOSFETs with high-k gate dielectric compared with the same effective thickness SiO/sub 2/ film.
Keywords :
MOSFET; Monte Carlo methods; carrier mobility; impurity scattering; molecular dynamics method; semiconductor device models; SiO/sub 2/; SiO/sub 2/ film; carrier mobility; effective oxide thickness; ensemble Monte Carlo simulation; gate electrode; high-k gate dielectric; ionized impurity; molecular dynamics method; remote point charge scattering; ultrasmall MOSFET; ultrathin gate dielectric; Computational modeling; Degradation; Electrodes; Electrons; Impurities; Information geometry; MOSFETs; Monte Carlo methods; Particle scattering; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904271
