Title :
Optimizing the electromigration performance of copper interconnects
Author :
Besser, P. ; Marathe, A. ; Zhao, L. ; Herrick, M. ; Capasso, C. ; Kawasaki, H.
Author_Institution :
Technol. Dev. Group, Adv. Micro Devices Inc., Austin, TX, USA
Abstract :
The effects of changes in linewidth, barrier type and anneal temperature on electromigration (EM) reliability of inlaid Cu interconnect lines were investigated. Methods developed for quantifying changes in grain size and orientation with changes in processing are detailed and applied to understand their impact on electromigration. While interfaces and microstructure both play a role in Cu reliability, interface diffusion is the dominant effect. For a constant interface and linewidth, grain size is shown to affect reliability.
Keywords :
annealing; copper; diffusion barriers; electromigration; grain size; integrated circuit interconnections; integrated circuit reliability; Cu; annealing; copper interconnect; crystallographic orientation; diffusion barrier; electromigration reliability; grain size; interface diffusion; linewidth; microstructure; Artificial intelligence; Copper; Electromigration; Failure analysis; Grain boundaries; Grain size; Integrated circuit interconnections; Integrated circuit reliability; Microstructure; Temperature;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904272
