Title :
25ns 256K × 1/64K × 4 CMOS SRAMs
Author :
Ichinose, Kento ; Kohno, Yusuke ; Shinohara, Hirofumi ; Kawai, Yusuke ; Akasaka, Y. ; Kayano, S.
Author_Institution :
Mitsubishi LSI Research and Development Laboratory, Hyogo, Japan
Keywords :
Aluminum; Delay effects; Delay lines; Inverters; Latches; Logic arrays; Power dissipation; Random access memory; Read-write memory; Trigger circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/ISSCC.1986.1156939
