Title :
COM2 SiGe modular BiCMOS technology for digital, mixed-signal, and RF applications
Author :
Carroll, M. ; Ivanov, T. ; Kuehne, S. ; Chu, J. ; King, C. ; Frei, M. ; Mastrapasqua, M. ; Johnson, R. ; Ng, K. ; Moinian, S. ; Martin, S. ; Huang, C. ; Hsu, T. ; Nguyen, D. ; Singh, R. ; Fritzinger, L. ; Esry, T. ; Moller, W. ; Kane, B. ; Abeln, G. ; Hwa
Author_Institution :
Lucent Technol. Bell Labs., Orlando, FL, USA
Abstract :
The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16 /spl mu/m COM2 digital CMOS process which features 1.5 V NMOS and PMOS transistors with 2.4 nm gate oxide, 0.135 /spl mu/m gate length, and up to 7 metal levels. Technology enhancement modules including dense SRAM, SiGe NPN bipolar transistor, and a variety of passive components have been developed to allow the COM2 technology to be cost-effectively optimized for a wide range of applications.
Keywords :
BiCMOS integrated circuits; BiCMOS memory circuits; Ge-Si alloys; SRAM chips; embedded systems; integrated circuit design; isolation technology; mixed analogue-digital integrated circuits; 0.16 micron; 1.5 V; COM2 SiGe modular BiCMOS technology; COM2 digital CMOS process; NMOS transistors; NPN bipolar transistor; PMOS transistors; RF integrated circuits; SiGe; TDDB; dense SRAM; digital IC; efficient design; mixed-signal IC; passive components; polycide gate; shallow trench isolation; system-on-chip integration; technology enhancement modules; BiCMOS integrated circuits; CMOS technology; Digital integrated circuits; Germanium silicon alloys; Integrated circuit manufacture; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; System-on-a-chip;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904279
