A 73 GHz f/sub T/ 0.18 /spl mu/m RF-SiGe BiCMOS technology considering thermal budget trade-off and with reduced boron-spike effect on HBT characteristics

Author

Hashimoto, T. ; Sato, F. ; Aoyama, T. ; Suzuki, H. ; Yoshida, H. ; Fujii, H. ; Yamazaki, T.

Author_Institution

ULSI Device Dev. Div., NEC Corp., Sagamihara, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

149

Lastpage

152

Abstract

This paper describes a 73 GHz f/sub T/ 0.18 /spl mu/m SiGe BiCMOS technology. This BiCMOS technology has the following key points: (1) The 2-step annealing technique for CMOS is utilized to solve the thermal budget trade-off between SiGe HBTs and CMOS. (2) A robust Ge profile design is implemented to improve the thermal stability of the SiGe base layer. (3) The Si-spacer layer is inserted between the Si collector and the SiGe base layer in order to reduce undesirable boron-spike effect. This process yields the SiGe HBT with f/sub T/ of 73 GHz and f/sub max/ of 61 GHz without compromising 0.18 /spl mu/m p/sup +//n/sup +/ dual gate CMOS characteristics.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; annealing; boron; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; thermal stability; 0.18 micron; 73 GHz; Ge profile; HBT; RF SiGe BiCMOS technology; Si spacer layer; SiGe:B; boron spike effect; dual gate CMOS characteristics; thermal budget; thermal stability; two-step annealing; Annealing; BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Electrodes; Germanium silicon alloys; Heterojunction bipolar transistors; Robust stability; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904280

Filename

904280