Title :
A 73 GHz f/sub T/ 0.18 /spl mu/m RF-SiGe BiCMOS technology considering thermal budget trade-off and with reduced boron-spike effect on HBT characteristics
Author :
Hashimoto, T. ; Sato, F. ; Aoyama, T. ; Suzuki, H. ; Yoshida, H. ; Fujii, H. ; Yamazaki, T.
Author_Institution :
ULSI Device Dev. Div., NEC Corp., Sagamihara, Japan
Abstract :
This paper describes a 73 GHz f/sub T/ 0.18 /spl mu/m SiGe BiCMOS technology. This BiCMOS technology has the following key points: (1) The 2-step annealing technique for CMOS is utilized to solve the thermal budget trade-off between SiGe HBTs and CMOS. (2) A robust Ge profile design is implemented to improve the thermal stability of the SiGe base layer. (3) The Si-spacer layer is inserted between the Si collector and the SiGe base layer in order to reduce undesirable boron-spike effect. This process yields the SiGe HBT with f/sub T/ of 73 GHz and f/sub max/ of 61 GHz without compromising 0.18 /spl mu/m p/sup +//n/sup +/ dual gate CMOS characteristics.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; annealing; boron; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; thermal stability; 0.18 micron; 73 GHz; Ge profile; HBT; RF SiGe BiCMOS technology; Si spacer layer; SiGe:B; boron spike effect; dual gate CMOS characteristics; thermal budget; thermal stability; two-step annealing; Annealing; BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Electrodes; Germanium silicon alloys; Heterojunction bipolar transistors; Robust stability; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904280
