Title :
Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies
Author :
Zurcher, P. ; Alluri, P. ; Chu, P. ; Duvallet, A. ; Happ, C. ; Henderson, R. ; Mendonca, J. ; Kim, M. ; Petras, M. ; Raymond, M. ; Remmel, T. ; Roberts, D. ; Steimle, B. ; Stipanuk, J. ; Straub, S. ; Sparks, T. ; Tarabbia, M. ; Thibieroz, H. ; Miller, M.
Author_Institution :
Labs. of Mater. & Structures, Motorola Inc., Tempe, AZ, USA
Abstract :
High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um/sup 2/ and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm//spl deg/C have been integrated in a dual-inlaid Cu-based backend for mixed-signal applications. These devices deliver reduced parasitics, better linearity, lower temperature coefficients, lower noise, and better matching as compared to current silicon based devices.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; MIM devices; copper; integrated circuit technology; metallisation; thin film capacitors; thin film resistors; BiCMOS technology; Cu; RF CMOS technology; capacitance density; copper metallization; metal thin film resistor; mixed-signal IC; sheet resistance; temperature coefficient of resistivity; thin film MIM capacitor; Capacitance; Conductivity; Copper; Linearity; MIM capacitors; Metal-insulator structures; Noise reduction; Resistors; Temperature; Transistors;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904281
