Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies

Author

Zurcher, P. ; Alluri, P. ; Chu, P. ; Duvallet, A. ; Happ, C. ; Henderson, R. ; Mendonca, J. ; Kim, M. ; Petras, M. ; Raymond, M. ; Remmel, T. ; Roberts, D. ; Steimle, B. ; Stipanuk, J. ; Straub, S. ; Sparks, T. ; Tarabbia, M. ; Thibieroz, H. ; Miller, M.

Author_Institution

Labs. of Mater. & Structures, Motorola Inc., Tempe, AZ, USA

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

153

Lastpage

156

Abstract

High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um/sup 2/ and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm//spl deg/C have been integrated in a dual-inlaid Cu-based backend for mixed-signal applications. These devices deliver reduced parasitics, better linearity, lower temperature coefficients, lower noise, and better matching as compared to current silicon based devices.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; MIM devices; copper; integrated circuit technology; metallisation; thin film capacitors; thin film resistors; BiCMOS technology; Cu; RF CMOS technology; capacitance density; copper metallization; metal thin film resistor; mixed-signal IC; sheet resistance; temperature coefficient of resistivity; thin film MIM capacitor; Capacitance; Conductivity; Copper; Linearity; MIM capacitors; Metal-insulator structures; Noise reduction; Resistors; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904281

Filename

904281