Integrated power switches for X-Band PA

Author

Pereira, Aaron ; Parker, Tony ; Heimlich, Michael ; Weste, Neil

Author_Institution

Dept. of Eng., Macquarie Univ., Sydney, NSW, Australia

fYear

2015

fDate

10-15 May 2015

Firstpage

1617

Lastpage

1622

Abstract

This paper reports on the development of high frequency, high efficiency integrated supply modulators for airborne and space based high power amplifier modules. The power switches within the integrated modulators were RF HEMTs optimized for power amplifier applications. The modulators were fabricated in commercial foundry GaN process and delivered 10W of output power with an efficiency of 83.5% while switching at a frequency of 100 MHz. Development of high frequency supply modulators paves the way for integration of the HPA and modulators onto the MMIC die and on-chip drain bias modulation for efficiency enhancement of the HPA.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium compounds; microwave field effect transistors; microwave switches; power HEMT; wide band gap semiconductors; GaN; MMIC die; RF HEMT; X-band PA; commercial foundry GaN process; efficiency enhancement; frequency 100 MHz; high efficiency integrated supply modulators; high frequency; integrated power switches; on-chip drain bias modulation; power 10 W; power amplifier applications; Gallium nitride; HEMTs; Logic gates; MMICs; MODFETs; Modulation; Switches; MMIC Power Switches; integrated power switches; power converters; supply Modulators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radar Conference (RadarCon), 2015 IEEE

Conference_Location

Arlington, VA

Print_ISBN

978-1-4799-8231-8

Type

conf

DOI

10.1109/RADAR.2015.7131257

Filename

7131257