DocumentCode :
2884757
Title :
Gas sensing properties of In2−xMnxO3−δ
Author :
Clinsha, P.C. ; Jayaraman, V. ; Gnanasekaran, T.
Author_Institution :
Liquid Metals and Structural Chemistry Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 INDIA
fYear :
2012
fDate :
7-10 March 2012
Firstpage :
197
Lastpage :
199
Abstract :
Nominal compositions of general formula In2−xMnxO3−δ were prepared by solid-state route and their electrical conductivity and hydrogen sensing characteristics were investigated. With manganese addition, the conductivity was found to increase initially and then decrease while the activation energy for the conduction process was increasing. In1.99Mn0.01O3-δ, In1.985Mn0.015O3-δ, In1.98Mn0.02O3-δ were found to sense 100 vppm to 2 % of hydrogen at 623 K. Preliminary results indicated the possibility of two types of gas sensing mechanisms operating at low and high concentrations of hydrogen in air.
Keywords :
electrical conductivity; hydrogen sensing; indium-manganese oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on
Conference_Location :
Pune, India
Print_ISBN :
978-1-4673-1040-6
Type :
conf
DOI :
10.1109/ISPTS.2012.6260921
Filename :
6260921
Link To Document :
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