Title :
A high reliability metal insulator metal capacitor for 0.18 /spl mu/m copper technology
Author :
Armacost, M. ; Augustin, A. ; Felsner, P. ; Feng, Y. ; Friese, G. ; Heidenreich, J. ; Hueckel, G. ; Prigge, O. ; Stein, K.
Author_Institution :
IBM Semicond. Res. & Dev. Centre, Hopewell Junction, NY, USA
Abstract :
A high reliability Metal-Insulator-Metal capacitor integrated into a 0.18 /spl mu/m CMOS foundry technology using Copper interconnects is discussed. Integration solutions specific to Copper processing are described and process yield and reliability results are presented on 0.72 fF//spl mu/m/sup 2/ capacitors. Performance and reliability metrics are shown to be comparable to those formed on Aluminum technologies.
Keywords :
CMOS integrated circuits; MIM devices; capacitors; copper; integrated circuit interconnections; integrated circuit reliability; 0.18 micron; CMOS technology; Cu; copper interconnect; metal-insulator-metal capacitor; process yield; reliability; Aluminum; CMOS technology; Copper; Dielectrics; Insulation; Integrated circuit interconnections; Integrated circuit technology; MIM capacitors; Metal-insulator structures; Microstructure;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904282
