DocumentCode
2884759
Title
A high reliability metal insulator metal capacitor for 0.18 /spl mu/m copper technology
Author
Armacost, M. ; Augustin, A. ; Felsner, P. ; Feng, Y. ; Friese, G. ; Heidenreich, J. ; Hueckel, G. ; Prigge, O. ; Stein, K.
Author_Institution
IBM Semicond. Res. & Dev. Centre, Hopewell Junction, NY, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
157
Lastpage
160
Abstract
A high reliability Metal-Insulator-Metal capacitor integrated into a 0.18 /spl mu/m CMOS foundry technology using Copper interconnects is discussed. Integration solutions specific to Copper processing are described and process yield and reliability results are presented on 0.72 fF//spl mu/m/sup 2/ capacitors. Performance and reliability metrics are shown to be comparable to those formed on Aluminum technologies.
Keywords
CMOS integrated circuits; MIM devices; capacitors; copper; integrated circuit interconnections; integrated circuit reliability; 0.18 micron; CMOS technology; Cu; copper interconnect; metal-insulator-metal capacitor; process yield; reliability; Aluminum; CMOS technology; Copper; Dielectrics; Insulation; Integrated circuit interconnections; Integrated circuit technology; MIM capacitors; Metal-insulator structures; Microstructure;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904282
Filename
904282
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