• DocumentCode
    2884769
  • Title

    Impedance spectroscopy analysis of In2O3 thin film gas sensor

  • Author

    Mariappan, C.R. ; Prabhu, E. ; Gnanasekar, K.I. ; Jayaraman, V. ; Gnanasekaran, T.

  • Author_Institution
    Liquid Metals and Structural Chemistry Division, Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, INDIA
  • fYear
    2012
  • fDate
    7-10 March 2012
  • Firstpage
    200
  • Lastpage
    203
  • Abstract
    In2O3 thin film was fabricated using pulsed laser deposition technique. The structure and morphology of the thin film were characterized by X-ray diffraction and atomic force microscopy respectively. AC impedance of In2O3 thin film gas sensor were investigated at different temperatures (275 – 425 °C) when exposed into clean air and air containing NOx. Significant NOx sensing characteristics of thin film were observed at 325 °C by ac impedance analysis. The resistance and capacitance of indium oxide film were increased in the presence of NOx. The mechanism for the increase of resistance and of capacitance is presented.
  • Keywords
    In2O3 thin film; gas sensor; impedance spectroscopy; selectivity; space charge layer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on
  • Conference_Location
    Pune, India
  • Print_ISBN
    978-1-4673-1040-6
  • Type

    conf

  • DOI
    10.1109/ISPTS.2012.6260922
  • Filename
    6260922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2884769