Title :
Impedance spectroscopy analysis of In2O3 thin film gas sensor
Author :
Mariappan, C.R. ; Prabhu, E. ; Gnanasekar, K.I. ; Jayaraman, V. ; Gnanasekaran, T.
Author_Institution :
Liquid Metals and Structural Chemistry Division, Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, INDIA
Abstract :
In2O3 thin film was fabricated using pulsed laser deposition technique. The structure and morphology of the thin film were characterized by X-ray diffraction and atomic force microscopy respectively. AC impedance of In2O3 thin film gas sensor were investigated at different temperatures (275 – 425 °C) when exposed into clean air and air containing NOx. Significant NOx sensing characteristics of thin film were observed at 325 °C by ac impedance analysis. The resistance and capacitance of indium oxide film were increased in the presence of NOx. The mechanism for the increase of resistance and of capacitance is presented.
Keywords :
In2O3 thin film; gas sensor; impedance spectroscopy; selectivity; space charge layer;
Conference_Titel :
Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on
Conference_Location :
Pune, India
Print_ISBN :
978-1-4673-1040-6
DOI :
10.1109/ISPTS.2012.6260922
