DocumentCode
2884835
Title
InP HEMT amplifier development for G-band (140-220 GHz) applications
Author
Lai, R. ; Barsky, M. ; Grundbacher, R. ; Liu, P.H. ; Chin, T.P. ; Nishimoto, M. ; Elmajarian, R. ; Rodriguez, R. ; Tran, L. ; Gutierrez, A. ; Oki, A. ; Streit, D.
Author_Institution
Semicond. Products Centre, TRW Inc., Redondo Beach, CA, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
175
Lastpage
177
Abstract
In this paper we describe a unique InP HEMT MMIC process that has been developed for the demonstration of the first ever G-band (140-220 GHz) amplifiers. This process combines enhanced InP HEMT profiles with a 70 nm T-gate process and a dry via etch process to achieve a high maximum gain of greater than 8 dB at 200 GHz and the highest gain amplifiers ever demonstrated (15 dB at 215 GHz).
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; indium compounds; millimetre wave amplifiers; sputter etching; 140 to 220 GHz; 70 nm; 8 to 15 dB; G-band; HEMT amplifier; InP; MMIC process; T-gate process; dry via etch process; Circuits; Cutoff frequency; Dry etching; Grounding; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Semiconductor optical amplifiers; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904286
Filename
904286
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