Title :
Abrupt junction InP/GaAsSb/InP double heterojunction bipolar transistors with F/sub T/ as high as 250 GHz and BV/sub CEO/>6 V
Author :
Dvorak, M.W. ; Pitts, O.J. ; Watkins, S.P. ; Bolognesi, C.R.
Author_Institution :
Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
We report manufacturable ultrahigh-speed MOCVD-grown InP/GaAsSb/InP DHBTs with f/sub T/=270 GHz and f/sub MAX/>300 GHz and featuring BV/sub CEO/>6 V with a 250 /spl Aring/ C-doped base layer. Additionally, DHBTs fabricated with a 200 /spl Aring/ base feature f/sub T/=305 GHz and f/sub MAX/=230 GHz without reducing BV/sub CEO/. The present devices are the fastest DHBTs ever reported.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; 200 angstrom; 230 GHz; 250 angstrom; 270 GHz; 305 GHz; DHBTs; III-V semiconductors; InP-GaAsSb-InP; MOCVD; abrupt junction double heterojunction bipolar transistors; Breakdown voltage; Cutoff frequency; Double heterojunction bipolar transistors; HEMTs; Indium phosphide; Laboratories; MODFETs; Physics; Semiconductor device manufacture; Semiconductor devices;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904287
