Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters

Author

Quay, R. ; Palankovski, V. ; Chertouk, M. ; Leuther, A. ; Selberherr, S.

Author_Institution

Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

186

Lastpage

189

Abstract

Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT technologies are evaluated by simulation and a single set of physical parameters is verified. The critical interaction of self-heating, impact ionization, SiN surface effects, and material composition is incorporated, which renders the simulation results suitable for the evaluation of device reliability issues. Starting from the analysis of gate-currents the simulation model can quantitatively support the basic understanding of this advanced material system.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device models; semiconductor device reliability; GaAs; GaAs substrate; InAlAs-InGaAs; InAlAs/InGaAs high electron mobility transistor; InP; InP substrate; MINIMOS-NT; SiN; SiN surface effects; device reliability; gate current; impact ionization; material composition; self-heating; two-dimensional simulation; Composite materials; Gallium arsenide; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Materials reliability; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904289

Filename

904289