Title :
Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters
Author :
Quay, R. ; Palankovski, V. ; Chertouk, M. ; Leuther, A. ; Selberherr, S.
Author_Institution :
Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany
Abstract :
Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT technologies are evaluated by simulation and a single set of physical parameters is verified. The critical interaction of self-heating, impact ionization, SiN surface effects, and material composition is incorporated, which renders the simulation results suitable for the evaluation of device reliability issues. Starting from the analysis of gate-currents the simulation model can quantitatively support the basic understanding of this advanced material system.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device models; semiconductor device reliability; GaAs; GaAs substrate; InAlAs-InGaAs; InAlAs/InGaAs high electron mobility transistor; InP; InP substrate; MINIMOS-NT; SiN; SiN surface effects; device reliability; gate current; impact ionization; material composition; self-heating; two-dimensional simulation; Composite materials; Gallium arsenide; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Materials reliability; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904289
