Study of plasma in bias pluse duty ratio at ICP etch chamber

Summary form only given. It has been very interested pulsed bias etching system because of it´s low electron temperature and good plasma uniformity. Low electron temperature can enhance etch selectivity and it is very crucial for oxide etching. In the pulse operation system, we must increase bias power to apply same power with respect to CW operation. Our experiment is focused on pulse duty ratio which can determine applied power and plasma parameters such as Te , Ne and Uniformity. For fixed pulse frequency(lkHz), we can get a optimal duty ratio which can reduce Te and enhance plasma uniformity with very little decrease of plasma density.