Low temperature poly-Si TFT-electrophoretic displays (TFT-EPDs) with four level gray scale

Author

Inoue, S. ; Sadao, K. ; Ozawa, T. ; Kobashi, Y. ; Kawai, H. ; Kitagawa, T. ; Shimoda, T.

Author_Institution

Base Technol. Res. Centre, Seiko Epson Corp., Nagano, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

197

Lastpage

200

Abstract

In order to realize low power consumption and high resolution displays, we have investigated electrophoretic displays (EPDs) combined with low temperature (/spl les/425/spl deg/C) polycrystalline-silicon thin film transistors (poly-Si TFTs). The electrophoretic microcapsule layer was coated on TFT array. As a result, we could successfully fabricate quarter VGA reflective type displays with bistability, wide-viewing angle and an 18 V operation. In addition, four level gray scale images were also obtained using an area ratio gray scale (ARG) driving method.

Keywords

display devices; electrophoresis; elemental semiconductors; low-power electronics; silicon; thin film transistors; 18 V; Si; area ratio gray scale driving method; bistability; electrophoretic display; four-level gray scale image; low-power high-resolution display; low-temperature polycrystalline silicon thin film transistor; reflective-type display; viewing angle; Counting circuits; Displays; Electrodes; Fabrication; Image resolution; Laser beams; Plasma temperature; Substrates; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904291

Filename

904291