Title :
Low temperature poly-Si TFT-electrophoretic displays (TFT-EPDs) with four level gray scale
Author :
Inoue, S. ; Sadao, K. ; Ozawa, T. ; Kobashi, Y. ; Kawai, H. ; Kitagawa, T. ; Shimoda, T.
Author_Institution :
Base Technol. Res. Centre, Seiko Epson Corp., Nagano, Japan
Abstract :
In order to realize low power consumption and high resolution displays, we have investigated electrophoretic displays (EPDs) combined with low temperature (/spl les/425/spl deg/C) polycrystalline-silicon thin film transistors (poly-Si TFTs). The electrophoretic microcapsule layer was coated on TFT array. As a result, we could successfully fabricate quarter VGA reflective type displays with bistability, wide-viewing angle and an 18 V operation. In addition, four level gray scale images were also obtained using an area ratio gray scale (ARG) driving method.
Keywords :
display devices; electrophoresis; elemental semiconductors; low-power electronics; silicon; thin film transistors; 18 V; Si; area ratio gray scale driving method; bistability; electrophoretic display; four-level gray scale image; low-power high-resolution display; low-temperature polycrystalline silicon thin film transistor; reflective-type display; viewing angle; Counting circuits; Displays; Electrodes; Fabrication; Image resolution; Laser beams; Plasma temperature; Substrates; Thin film transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904291
