DocumentCode :
2884936
Title :
High density, low parasitic direct integration by fluidic self assembly (FSA)
Author :
Smith, J.S.
Author_Institution :
California Univ., Berkeley, CA, USA
fYear :
2000
fDate :
10-13 Dec. 2000
Firstpage :
201
Lastpage :
204
Abstract :
Fluidic self assembly is a novel technique for accurately assembling large numbers of very small devices. The resulting assemblies are planar, and planarization and metallization of the assemblies result in demonstrated interconnect densities of greater than 50 interconnects per millimeter of perimeter, or a density of 10/sup 5/ per cm/sup 2/ with multilevel metallization. This high density is possible due to the planar structure, and an alignment precision of /spl plusmn/1 micron. The small size of the interconnects also results in very low parasitic capacitance, comparable to on die traces. Demonstrated yields are 0.9999 for assemblies with thousands of elements. This paper will discuss this recent progress in self assembly technology, and applications including integration of high capacity optoelectronic I/O devices.
Keywords :
integrated circuit interconnections; integrated circuit yield; metallisation; microfluidics; self-assembly; surface treatment; direct integration; fluidic self-assembly technology; interconnect density; metallization; multilevel metallization; optoelectronic I/O device; parasitic capacitance; planarization; yield; Antenna arrays; Chemicals; Costs; Frequency; Optoelectronic devices; Robotic assembly; Shape; Silicon; Surface treatment; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
Type :
conf
DOI :
10.1109/IEDM.2000.904292
Filename :
904292
Link To Document :
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