DocumentCode
2884936
Title
High density, low parasitic direct integration by fluidic self assembly (FSA)
Author
Smith, J.S.
Author_Institution
California Univ., Berkeley, CA, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
201
Lastpage
204
Abstract
Fluidic self assembly is a novel technique for accurately assembling large numbers of very small devices. The resulting assemblies are planar, and planarization and metallization of the assemblies result in demonstrated interconnect densities of greater than 50 interconnects per millimeter of perimeter, or a density of 10/sup 5/ per cm/sup 2/ with multilevel metallization. This high density is possible due to the planar structure, and an alignment precision of /spl plusmn/1 micron. The small size of the interconnects also results in very low parasitic capacitance, comparable to on die traces. Demonstrated yields are 0.9999 for assemblies with thousands of elements. This paper will discuss this recent progress in self assembly technology, and applications including integration of high capacity optoelectronic I/O devices.
Keywords
integrated circuit interconnections; integrated circuit yield; metallisation; microfluidics; self-assembly; surface treatment; direct integration; fluidic self-assembly technology; interconnect density; metallization; multilevel metallization; optoelectronic I/O device; parasitic capacitance; planarization; yield; Antenna arrays; Chemicals; Costs; Frequency; Optoelectronic devices; Robotic assembly; Shape; Silicon; Surface treatment; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904292
Filename
904292
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