• DocumentCode
    2884936
  • Title

    High density, low parasitic direct integration by fluidic self assembly (FSA)

  • Author

    Smith, J.S.

  • Author_Institution
    California Univ., Berkeley, CA, USA
  • fYear
    2000
  • fDate
    10-13 Dec. 2000
  • Firstpage
    201
  • Lastpage
    204
  • Abstract
    Fluidic self assembly is a novel technique for accurately assembling large numbers of very small devices. The resulting assemblies are planar, and planarization and metallization of the assemblies result in demonstrated interconnect densities of greater than 50 interconnects per millimeter of perimeter, or a density of 10/sup 5/ per cm/sup 2/ with multilevel metallization. This high density is possible due to the planar structure, and an alignment precision of /spl plusmn/1 micron. The small size of the interconnects also results in very low parasitic capacitance, comparable to on die traces. Demonstrated yields are 0.9999 for assemblies with thousands of elements. This paper will discuss this recent progress in self assembly technology, and applications including integration of high capacity optoelectronic I/O devices.
  • Keywords
    integrated circuit interconnections; integrated circuit yield; metallisation; microfluidics; self-assembly; surface treatment; direct integration; fluidic self-assembly technology; interconnect density; metallization; multilevel metallization; optoelectronic I/O device; parasitic capacitance; planarization; yield; Antenna arrays; Chemicals; Costs; Frequency; Optoelectronic devices; Robotic assembly; Shape; Silicon; Surface treatment; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-6438-4
  • Type

    conf

  • DOI
    10.1109/IEDM.2000.904292
  • Filename
    904292