DocumentCode
2884942
Title
A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure
Author
Ohgata, K. ; Mishima, Y. ; Sasaki, N.
Author_Institution
LCD Lab., Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
205
Lastpage
208
Abstract
We proposed a new low temperature process for self-aligned gate overlapped LDD (GOLDD) poly-Si TFTs. The gate-overlapped LDD structure was self-aligned by side-etch of Al-Nd in Al-Nd/Mo gate electrode. A low temperature dopant activation was done by using H/sub 2/ ion doping after 450/spl deg/C annealing, in N/sub 2/ atmospheric. The characteristics of our GOLDD poly-Si TFT had high ON-current and low OFF-current.
Keywords
annealing; elemental semiconductors; semiconductor doping; silicon; thin film transistors; 450 C; Al-Nd/Mo gate electrode; AlNd-Mo; H/sub 2/ ion doping; Si; annealing; dopant activation; low temperature process; polysilicon TFT; self-aligned gate-overlapped LDD structure; side etching; Annealing; Doping; Electrodes; Etching; Glass manufacturing; Laboratories; Plasma temperature; Temperature dependence; Thermal resistance; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904293
Filename
904293
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