DocumentCode :
2884960
Title :
Two-photon induced ultraviolet semiconductor laser assisted by the Rabi flopping
Author :
Zhang, Chunfeng ; Dong, Zhiwei ; You, Guanjun ; Qian, Shixiong
Author_Institution :
Phys. Dept., Fudan Univ., Shanghai
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Ultraviolet lasing emission was observed from the wide band semiconductor ZnO excited by the fs pulses with photon energy less than the half of the bandgap via the Rabi flopping assisted Two-photon process.
Keywords :
semiconductor lasers; two-photon processes; wide band gap semiconductors; zinc compounds; Rabi flopping; ZnO; photon energy; two-photon induced ultraviolet semiconductor laser; ultraviolet lasing emission; wide band semiconductor; Absorption; Laser excitation; Laser theory; Optical pumping; Photonic band gap; Physics; Semiconductor lasers; Surface emitting lasers; Ultrafast optics; Zinc oxide; 140.5960; 190.4180; 270.0270;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4629058
Filename :
4629058
Link To Document :
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