80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications

Author

Buchanan, D.A. ; Gusev, E.P. ; Cartier, E. ; Okorn-Schmidt, H. ; Rim, K. ; Gribelyuk, M.A. ; Mocuta, A. ; Ajmera, A. ; Copel, M. ; Guha, S. ; Bojarczuk, N. ; Callegari, A. ; D´Emic, C. ; Kozlowski, P. ; Chan, K. ; Fleming, R.J. ; JAmison, P.C. ; Brown, I.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

223

Lastpage

226

Abstract

This work demonstrates the integration of Al/sub 2/O/sub 3/ gate-dielectrics into a sub 0.1 /spl mu/m n-MOS process using polycrystalline silicon gates, Devices incorporating Al/sub 2/O/sub 3/ films with a dielectric constant /spl epsi/-11 and electrical thickness t/sub qm/<1.5 nm have been fabricated. Gate leakage currents are /spl sim/100 times lower than those found in SiO/sub 2/ films of equivalent thickness. Encouraging device characteristics are shown. Charging due to slow states and/or fixed charge have been shown to be in the 100 mV range which may be related to the somewhat reduced mobility. The room temperature reliability of these devices based upon the values of /spl beta/ (Weibull slope) and /spl gamma/ (voltage acceleration) suggest that the Al/sub 2/O/sub 3/ lifetime may exceed that of SiO/sub 2/ films.

Keywords

CMOS integrated circuits; ULSI; Weibull distribution; alumina; dielectric thin films; integrated circuit reliability; leakage currents; permittivity; 0.1 micron; 100 mV; 80 nm; Al/sub 2/O/sub 3/; CMOS; ULSI applications; Weibull slope; dielectric constant; electrical thickness; gate leakage currents; polysilicon gated n-FETs; room temperature reliability; slow states; ultra-thin gate dielectric; voltage acceleration; Acceleration; FETs; High-K gate dielectrics; Implants; Microelectronics; Rapid thermal annealing; Silicon; Temperature; Ultra large scale integration; Weibull distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904297

Filename

904297