DocumentCode
2885024
Title
Space charge limited gate current noise in AlGaN/GaN high Electron Mobility Transistors
Author
Weikai Xu ; Bosman, Gijs
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
fYear
2013
fDate
24-28 June 2013
Firstpage
1
Lastpage
4
Abstract
The experimental gate current-voltage and low frequency current noise characteristics of AlGaN/GaN High Electron Mobility Transistors are presented and interpreted within a Space Charge Limited Current model. The Hooge parameter and gate noise parameter are extracted. Through the analysis of Lorentzians observed in the spectra, two traps are identified.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; Hooge parameter; Lorentzians analysis; experimental gate current-voltage; gate noise parameter; high electron mobility ransistors; low frequency current noise characteristics; space charge limited gate current noise; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; Logic gates; MODFETs; Noise; AlGaN/GaN HEMTs; Hooge parameter; Lorentzians; low frequency noise; space charge limited current;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location
Montpellier
Print_ISBN
978-1-4799-0668-0
Type
conf
DOI
10.1109/ICNF.2013.6578955
Filename
6578955
Link To Document