A comparison of 2-D simulations and measurements of low frequency noise on InGaP/GaAs HBT transistors at low and high level injection

We propose a robust solution to accurately simulate the trap assisted GR noise in real-life semiconductor devices at low as well as high injection levels. The powerful postprocessing tool developed on the mathematical SCILAB software package is the Langevin method associated to Green´s functions responses of the device. It allows performing accurately noise simulations of semiconductor devices. Our numerical simulator of trapping noise in semiconductor devices is coupled with the output data of one of the simulator available in the public domain, namely Sentaurus fron Synopsys. Commercially available simulator present considerable advantages in performing accurate DC, AC and transient simulations of semiconductor devices, including many fundamental and parasitic effects which are not generally taken into account in house-made simulators.