Title :
A comparison of 2-D simulations and measurements of low frequency noise on InGaP/GaAs HBT transistors at low and high level injection
Author :
Hadi, Khaled Abdel ; Al Hajjar, Ahmad ; Nallatamby, Jean-Christophe ; Prigent, Michel ; Jacquet, Jean-Claude ; Delage, S. ; Floriot, D.
Author_Institution :
XLIM, Univ. de Limoges, Brive-la-Gaillarde, France
Abstract :
We propose a robust solution to accurately simulate the trap assisted GR noise in real-life semiconductor devices at low as well as high injection levels. The powerful postprocessing tool developed on the mathematical SCILAB software package is the Langevin method associated to Green´s functions responses of the device. It allows performing accurately noise simulations of semiconductor devices. Our numerical simulator of trapping noise in semiconductor devices is coupled with the output data of one of the simulator available in the public domain, namely Sentaurus fron Synopsys. Commercially available simulator present considerable advantages in performing accurate DC, AC and transient simulations of semiconductor devices, including many fundamental and parasitic effects which are not generally taken into account in house-made simulators.
Keywords :
Green´s function methods; III-V semiconductors; electric noise measurement; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor devices; 2D simulations; GR noise; Green´s functions; InGaP-GaAs; InGaP-GaAs HBT transistors; Langevin method; SCILAB software package; Sentaurus; Synopsys; high level injection; low frequency noise measurements; low level injection; noise simulations; post processing tool; public domain; semiconductor devices; transient simulations; Electron traps; Equations; Heterojunctions; Mathematical model; Noise; Noise measurement; InGaP-GaAs heterojunctions; Numerical simulation; Sentaurus; Trap-assisted GR Noise;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578957