DocumentCode :
2885119
Title :
A 4K GaAs bipolar gate array
Author :
Han-Tzong Yuan ; Delaney, Joe ; Hung-Dah Shin ; Liem Tran
Author_Institution :
Texas Instruments Central Research Laboratory, Dallas, TX, USA
Volume :
XXIX
fYear :
1986
fDate :
19-21 Feb. 1986
Firstpage :
74
Lastpage :
75
Abstract :
A 4K GaAs gate array providing propagation delays in 32b shift registers of 230 and 550ps at 4 and 1mW dissipation for a fanout of four will be described.
Keywords :
Circuits; Fabrication; Gallium arsenide; Heterojunctions; Instruments; Isolation technology; Molecular beam epitaxial growth; Resistors; Schottky diodes; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1986.1156965
Filename :
1156965
Link To Document :
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