A high reliability copper dual-damascene interconnection with direct-contact via structure

Author

Ueno, K. ; Suzuki, M. ; Matsumoto, A. ; Motoyama, K. ; Tonegawa, T. ; Ito, N. ; Arita, K. ; Tsuchiya, Y. ; Wake, T. ; Kubo, A. ; Sugai, K. ; Oda, N. ; Miyamoto, H. ; Saito, S.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

265

Lastpage

268

Abstract

Direct-contact via (DCV) structure in which a Cu via-plug is directly contacted to an interconnect is proposed for a high reliability and high performance Cu dual-damascene (DD) interconnection. Distribution of electromigration (EM) lifetime is dramatically reduced to 0.1 by eliminating void formation at the via-bottom. The developed technology improves the lifetime of the early failure by 5 times. It leads to 1.7 times higher clock frequency due to the higher current density.

Keywords

copper; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; large scale integration; Cu; LSI; clock frequency; current density; direct-contact via structure; dual-damascene interconnection; early failure lifetime; electromigration lifetime; reliability; Copper; Current density; Current measurement; Degradation; Electrical resistance measurement; Electromigration; Failure analysis; Integrated circuit interconnections; Large scale integration; National electric code;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904307

Filename

904307