Role of long-range and short-range Coulomb potentials in threshold characteristics under discrete dopants in sub-0.1 /spl mu/m Si-MOSFETs

Author

Sano, N. ; Matsuzawa, K. ; Mukai, M. ; Nakayama, N.

Author_Institution

Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

275

Lastpage

278

Abstract

We investigate the Coulomb potential associated with discrete dopants in sub-0.1 /spl mu/m Si-MOSFETs from the physical viewpoint. It is found that the discrimination of the Coulomb potential between the long-range and short-range parts is essential in correctly simulating the device characteristics under nonuniform discrete dopants. A new dopant model appropriate for the 3D drift-diffusion (DD) simulations is proposed and it is demonstrated that the present model could properly take into account the threshold voltage variations in sub-0.1 /spl mu/m MOSFETs.

Keywords

MOSFET; diffusion; doping profiles; electric potential; elemental semiconductors; semiconductor device models; silicon; 3D drift-diffusion simulations; MOSFETs; Si; device characteristics simulation; discrete dopants; dopant model; long-range Coulomb potentials; nonuniform discrete dopants; short-range Coulomb potentials; threshold characteristics; threshold voltage variations; Electric potential; MOSFETs; Microscopy; Physics; Poisson equations; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904310

Filename

904310