• DocumentCode
    2885181
  • Title

    Research on the properties of ZnO films by 1/f noise measurement

  • Author

    Leroy, Gondy ; Gest, J. ; Yang, Lei ; Vandamme, L.K.J.

  • Author_Institution
    UDSMM, Univ. Lille Nord de France, Calais, France
  • fYear
    2013
  • fDate
    24-28 June 2013
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    ZnO films were deposited by dc sputtering technique on glass and Pt/Si substrates. The effect of growth parameters is investigated on sheet resistance and noise. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. We found that the noise results correlate strongly with the crystalline structure of ZnO. For comparison, we have also studied the ZnO films structural properties.
  • Keywords
    1/f noise; II-VI semiconductors; electric resistance; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; 1/f noise; Pt-Si; Pt-Si substrate; SiO2; ZnO; ZnO films; crystalline structure; dc sputtering technique; glass substrate; growth parameters; Films; Glass; Noise; Noise measurement; Silicon; Substrates; Zinc oxide; 1/f noise; ZnO films; crystalline structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2013 22nd International Conference on
  • Conference_Location
    Montpellier
  • Print_ISBN
    978-1-4799-0668-0
  • Type

    conf

  • DOI
    10.1109/ICNF.2013.6578963
  • Filename
    6578963
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2885181