DocumentCode :
2885181
Title :
Research on the properties of ZnO films by 1/f noise measurement
Author :
Leroy, Gondy ; Gest, J. ; Yang, Lei ; Vandamme, L.K.J.
Author_Institution :
UDSMM, Univ. Lille Nord de France, Calais, France
fYear :
2013
fDate :
24-28 June 2013
Firstpage :
1
Lastpage :
5
Abstract :
ZnO films were deposited by dc sputtering technique on glass and Pt/Si substrates. The effect of growth parameters is investigated on sheet resistance and noise. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. We found that the noise results correlate strongly with the crystalline structure of ZnO. For comparison, we have also studied the ZnO films structural properties.
Keywords :
1/f noise; II-VI semiconductors; electric resistance; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; 1/f noise; Pt-Si; Pt-Si substrate; SiO2; ZnO; ZnO films; crystalline structure; dc sputtering technique; glass substrate; growth parameters; Films; Glass; Noise; Noise measurement; Silicon; Substrates; Zinc oxide; 1/f noise; ZnO films; crystalline structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
Type :
conf
DOI :
10.1109/ICNF.2013.6578963
Filename :
6578963
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2885181
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