DocumentCode
2885211
Title
A 70ns 2Mb mask ROM with a programmed memory cell
Author
Ariizumi, S. ; Iwase, Takahiro ; Takizawa, Makoto ; Mocozuki, T. ; Ono, M. ; Maeda, Kumiko ; Asano, Masahiro ; Masuoka, Fujio
Author_Institution
Toshiba Integrated Circuits Division, Kawasaki, Japan
Volume
XXIX
fYear
1986
fDate
19-21 Feb. 1986
Firstpage
42
Lastpage
43
Abstract
This report will cover the development of a 70ns 2Mb CMOS mask ROM with a through-hole programmed memory, using double-poly layers and self-aligned contact. With 1.5μm design rules, the die measures 6.57 × 11.9mm.
Keywords
Detectors; Noise figure; Power supplies; Pulse amplifiers; Pulse generation; Read only memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location
Anaheim, CA, USA
Type
conf
DOI
10.1109/ISSCC.1986.1156970
Filename
1156970
Link To Document