Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices

Author

Ferry, D.K. ; Akis, R. ; Vasileska, D.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

287

Lastpage

290

Abstract

We incorporate an effective potential in a three-dimensional MOSFET simulation, in which the transport is handled by an ensemble Monte Carlo approach. We find that the threshold voltage is shifted and the carrier density is moved away from the interface, both effects given by quantization provided within the channel. However, the mean velocity of the carriers is not affected significantly by the introduction of this effective potential, and is only reduced by about 10%.

Keywords

MOSFET; Poisson equation; carrier density; carrier mobility; digital simulation; quantisation (quantum theory); semiconductor device models; 3D Monte Carlo simulation; MOSFETs; carrier density; carrier mean velocity; ensemble Monte Carlo approach; quantization; quantum effects; threshold voltage; ultra-short channel devices; Charge carrier density; Doping; MOSFETs; Monte Carlo methods; Poisson equations; Quantization; Quantum capacitance; Smoothing methods; Solid modeling; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904313

Filename

904313