Title :
Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices
Author :
Ferry, D.K. ; Akis, R. ; Vasileska, D.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
We incorporate an effective potential in a three-dimensional MOSFET simulation, in which the transport is handled by an ensemble Monte Carlo approach. We find that the threshold voltage is shifted and the carrier density is moved away from the interface, both effects given by quantization provided within the channel. However, the mean velocity of the carriers is not affected significantly by the introduction of this effective potential, and is only reduced by about 10%.
Keywords :
MOSFET; Poisson equation; carrier density; carrier mobility; digital simulation; quantisation (quantum theory); semiconductor device models; 3D Monte Carlo simulation; MOSFETs; carrier density; carrier mean velocity; ensemble Monte Carlo approach; quantization; quantum effects; threshold voltage; ultra-short channel devices; Charge carrier density; Doping; MOSFETs; Monte Carlo methods; Poisson equations; Quantization; Quantum capacitance; Smoothing methods; Solid modeling; Solid state circuits;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904313
