Title :
Ultrafast soft X-ray absorption spectroscopy
Author :
Seres, E. ; Spielmann, Ch
Author_Institution :
Phys. Inst. EPI, Wurzburg Univ., Germany
Abstract :
This paper demonstrates time resolved X-ray absorption spectroscopy with a resolution in the sub-20 fs range around the L-edge (100 eV) of amorphous silicon (XANES) and gathered information beyond the L-edge about the atomic structure with EXAFS. This setup can be easily adapted for other materials such as carbon, and open the way to gain insight into fast dynamical processes of large organic molecules.
Keywords :
EXAFS; X-ray optics; amorphous semiconductors; atomic structure; elemental semiconductors; high-speed optical techniques; silicon; 100 eV; 20 fs; EXAFS; Si; XANES; amorphous silicon; atomic structure; carbon; fast dynamical processes; large organic molecules; soft X-ray absorption spectroscopy; time resolved spectroscopy; ultrafast spectroscopy; Amorphous silicon; Electromagnetic wave absorption; Laser beam cutting; Monitoring; Optical harmonic generation; Optical pulse generation; Spectroscopy; Ultrafast optics; X-ray lasers; X-ray scattering;
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN :
0-7803-8973-5
DOI :
10.1109/EQEC.2005.1567331
