Title :
A novel FET-type ferroelectric memory with excellent data retention characteristics
Author :
Sung-Min Yoon ; Ishiwara, H.
Author_Institution :
R&D Assoc. for Future Electron Devices, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
A novel FET-type ferroelectric memory cell with 1T2C structure was fabricated, in which generation of depolarization field was suppressed by polarizing two ferroelectric capacitors in opposite directions. It was demonstrated that the stored data were nondestructively readout and their retention time was much longer than that of a usual ferroelectric-gate FET.
Keywords :
MIS structures; cellular arrays; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; 1T2C structure; FET-type ferroelectric memory; data retention characteristics; depolarization field; ferroelectric capacitors; nondestructive readout; retention time; stored data; Character generation; Dry etching; Fabrication; Ferroelectric films; Ferroelectric materials; MOS capacitors; MOSFET circuits; Oxidation; Polarization; Virtual reality;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904320
