Ultrafast optical switching of photonic crystals

Author

Euser, T.G. ; Guina, M. ; Suomalainen, S. ; Kalkman, J. ; Polman, A. ; Jun, Y. ; Wei, H. ; Norris, D.J. ; Vos, W.L.

Author_Institution

Dept. of Sci. & Technol., Univ. of Twente, Enschede

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We present time-resolved reflectivity spectra of optically, homogeneously switched photonic crystals. We observe large, ultrafast shifts of stopbands of GaAs/AlAs multilayer structures as well as in the photonic bandgap range of 3D Si inverse opals.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; high-speed optical techniques; infrared spectra; optical multilayers; photonic band gap; photonic crystals; reflectivity; silicon; time resolved spectra; 3D silicon inverse opals; GaAs-AlAs; Si; homogeneous switching; multilayer structures; photonic bandgap; photonic crystals; time-resolved reflectivity spectra; ultrafast optical switching; Absorption; Gallium arsenide; Nonlinear optics; Optical refraction; Optical scattering; Optical variables control; Photonic band gap; Photonic crystals; Reflectivity; Ultrafast optics; (160.4670) Optical materials; (320.7130) Ultrafast processes in condensed matter;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4629083

Filename

4629083