Degradation of ultra-thin gate oxides accompanied by hole direct tunneling: can we keep long-term reliability of p-MOSFETs?

Author

Deguchi, K. ; Uno, S. ; Ishida, A. ; Hirose, T. ; Kamakura, Y. ; Taniguchi, K.

Author_Institution

Dept. of Electron. & Inf. Syst., Osaka Univ., Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

327

Lastpage

330

Abstract

Degradation of ultra-thin gate oxide films accompanied by hole direct tunneling is investigated using a substrate hot hole injection technique. Although cold hole injection from the inversion layer of p-MOSFET does not affect the oxide reliability, the drastic degradation during the hot hole injection was observed. The new experimental findings on the hot-hole induced oxide degradation are well explained by the model of two-hole capture by an O vacancy.

Keywords

MOSFET; hole mobility; insulating thin films; inversion layers; semiconductor device reliability; tunnelling; cold hole injection; hole direct tunneling; inversion layer; long-term reliability; oxide reliability; p-MOSFETs; substrate hot hole injection technique; two-hole capture; ultra-thin gate oxides; Breakdown voltage; Charge carrier processes; Current density; Degradation; Hot carriers; Information systems; MOSFET circuits; Substrate hot electron injection; Tunneling; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904322

Filename

904322