Title :
Anomalous low temperature charge leakage mechanism in ULSI flash memories
Author :
Lam, C. ; Sunaga, T. ; Igarashi, Y. ; Ichinose, M. ; Kitamura, Kokoro ; Willets, C. ; Johnson, J. ; Mittl, S. ; White, F. ; Tang, H. ; Chen, T.-C.
Author_Institution :
Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA
Abstract :
We present a systematic study of an anomalous charge leakage phenomenon in flash memories which occurs at temperatures below 150/spl deg/C. Essential characteristics of the leakage are described in association with various process parameters. A new leakage mechanism based on diffusion of an ionic entity produced by regenerative electrochemical reactions through percolating networks in the silicon dioxide is proposed.
Keywords :
CMOS digital integrated circuits; ULSI; flash memories; hot carriers; leakage currents; logic gates; tunnelling; 0 to 150 degC; ULSI flash memories; anomalous low temperature charge leakage mechanism; ionic entity; percolating networks; process parameters; regenerative electrochemical reactions; Annealing; CMOS technology; Electron traps; Flash memory; Logic arrays; Microelectronics; Nonvolatile memory; Oxidation; Temperature; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904324
