Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications

Author

Seif, M. ; Pascal, F. ; Sagnes, B. ; Hoffmann, Axel ; Haendler, S. ; Chevalier, P. ; Gloria, Daniel

Author_Institution

IES, Univ. Montpellier II, Montpellier, France

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

In this study, we present recent low frequency noise results obtained on Si/SiGeC Heterojunction Bipolar Transistors (HBTs) associated with a 0.13μm BiCMOS technology. Two technologies are studied, referenced as A and B, with high frequency figures of merit f_T/f_MAX (unity current gain frequency/maximum oscillation frequency) 220/280 GHz for technology A and 300/400 GHz for technology B. The LF Noise measurements are performed in the 1Hz-100 kHz frequency range as a function of the base bias current and of the emitter area A_E. The 1/f noise component is studied through the SPICE LFN parameters A_F and K_F. The K_B figure of merit (K_B = K_F *A_E), used to compare the 1/f noise level, has an excellent value of 1.5 10^-10 μm² for technology A and above 6 10^-10 μm² for technology B. Dispersion of the 1/f noise level observed on technology B is associated to the presence of predominant GR components. A temperature study of the 1/f noise level evolution in the range 15-100°C was also done. The temperature dependence is week except at very low base current bias.

Keywords

1/f noise; BiCMOS integrated circuits; bipolar MIMIC; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device noise; silicon; silicon compounds; submillimetre wave integrated circuits; submillimetre wave transistors; 1/f noise component; Si-SiGeC; advanced BiCMOS technology; frequency 220 GHz; frequency 280 GHz; frequency 300 GHz; frequency 400 GHz; heterojunction bipolar transistor; low frequency noise measurement; maximum oscillation frequency); millimeterWave application; size 0.13 mum; temperature 15 C to 100 C; terahertz application; unity current gain frequency; Dispersion; Frequency measurement; Low-frequency noise; Noise level; Noise measurement; Semiconductor device measurement; BiCMOS; Heterojunction bipolar transistor (HBT); Low frequency noise; SiGe:C;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578977

Filename

6578977