Temperature dependence of LF noise in UTBB nMOSFETs

The temperature influence on the low frequency noise performance has been investigated in Ultra-Thin Body and BOX (UTBB) nMOSFETs, with emphasis on the Lorentzian components. An Arrhenius analysis of the shift of the peak of the frequency versus the current noise power spectral density provides information on the underlying generation-recombination (GR) centers, whether they are positioned in the silicon film or in the top or bottom dielectric layer. Here, trap energy levels around 0.03 eV to 0.24 eV and cross-sections of 1×10^-17 to 1×10^-19 cm² have been found, whereby the higher activation energies are found for the traps associated with the buried oxide.