Title :
A millimeter waveband monolithic limiter
Author :
Grigoryev, A.D. ; Kirillov, A.V. ; Usov, A.A.
Author_Institution :
St.-Petersburg State Electrotech. Univ., St. Petersburg, Russia
Abstract :
Design of a millimeter waveband limiter for low-noise amplifiers is presented. The limiter base elements are monolithic GaAs p-i-n diode matrices. The device provides amplifier availability up to m30 W input power at no more than 10 mW leaked power.
Keywords :
III-V semiconductors; gallium arsenide; low noise amplifiers; microwave limiters; p-i-n diodes; GaAs; LNA; low-noise amplifiers; millimeter waveband monolithic limiter; power 30 W; Availability; Electronic mail; Gallium arsenide; Low-noise amplifiers; P-i-n diodes; PIN photodiodes; Silicon;
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2010 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4244-6954-3
DOI :
10.1109/APEDE.2010.5624033
