Title :
Novel capacitor technology for high density stand-alone and embedded DRAMs
Author :
Yeong Kwan Kim ; Seung Hwan Lee ; Sung Je Choi ; Hong Bae Park ; Young Dong Seo ; Kwang Hyun Chin ; Dongchan Kim ; Jae Soon Lim ; Wan Don Kim ; Kab Jin Nam ; Man-Ho Cho ; Ki Hyun Hwang ; Young Sun Kim ; Seok Sik Kim ; Young Wook Park ; Joo Tae Moon ; Sang
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
Novel Al/sub 2/O/sub 3/ process was developed in order to extend the applicability of reliable SIS and MIS Al/sub 2/O/sub 3/ capacitors as well as Al/sub 2/O/sub 3/ EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism, electrical and interfacial properties of Al/sub 2/O/sub 3/ film were surprisingly improved. The SIS and MIS Al/sub 2/O/sub 3/ capacitor technologies with ultra-low thermal budget were confirmed by producing fully working 1 Gbit DRAM with design rule of 0.15 and 0.13 /spl mu/m, respectively. Moreover, Al/sub 2/O/sub 3/ EBL for a MIM capacitor was successfully used to preserve the excellent dielectric characteristics for the application of DRAM with design-rule of 0.10 /spl mu/m, and beyond.
Keywords :
DRAM chips; MIM devices; MIS capacitors; alumina; atomic layer epitaxial growth; integrated circuit technology; semiconductor-insulator-semiconductor structures; 0.1 micron; 0.13 micron; 0.15 micron; 1 Gbit; ALD process; Al/sub 2/O/sub 3/; MIM capacitor; MIS capacitors; SIS capacitors; atomic layer deposition; capacitor technology; design rule; dielectric characteristics; electrical properties; embedded DRAMs; high density stand-alone DRAMs; interfacial properties; smart growth mechanism; ultra-low thermal budget; Aluminum oxide; Dielectric thin films; Electrodes; Hydrogen; MIM capacitors; Mechanical factors; Metal-insulator structures; Moon; Random access memory; Semiconductor films;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904332
