Title :
Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate
Author :
Pud, S. ; Li, Jie ; Sibiliev, V. ; Petrychuk, M. ; Acevedo, Antonio ; Offenhausser, A. ; Vitusevich, S.
Author_Institution :
Peter Grunberg Inst., Forschungszentrum Julich, Julich, Germany
Abstract :
In this contribution we report on the influence of the electrolyte on transport properties of the silicon nanowire (NW) field effect transistor (FET) biosensor studied using noise spectroscopy. The results show that exposing the Si NW FET top and side surfaces to the electrolyte solution not only affects the threshold voltage, but also influences the charge state of the gate dielectric traps. NWs of different lengths were used to investigate the effect of the electrolyte on channel conductivity.
Keywords :
biosensors; electrolytes; elemental semiconductors; field effect transistors; nanowires; semiconductor device noise; silicon; NW FET; Si; channel conductivity; electrolyte; gate dielectric traps; liquid gate; noise characteristics; noise spectroscopy; silicon nanowire field effect transistor biosensor; silicon nanowire field effect transistors; transport characteristics; Current measurement; Dielectrics; Field effect transistors; Logic gates; Noise; Silicon; Voltage measurement; biosensor; electrolyte; noise spectroscopy; open-gate; silicon nanowires;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578984
