Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate

Author

Pud, S. ; Li, Jie ; Sibiliev, V. ; Petrychuk, M. ; Acevedo, Antonio ; Offenhausser, A. ; Vitusevich, S.

Author_Institution

Peter Grunberg Inst., Forschungszentrum Julich, Julich, Germany

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

In this contribution we report on the influence of the electrolyte on transport properties of the silicon nanowire (NW) field effect transistor (FET) biosensor studied using noise spectroscopy. The results show that exposing the Si NW FET top and side surfaces to the electrolyte solution not only affects the threshold voltage, but also influences the charge state of the gate dielectric traps. NWs of different lengths were used to investigate the effect of the electrolyte on channel conductivity.

Keywords

biosensors; electrolytes; elemental semiconductors; field effect transistors; nanowires; semiconductor device noise; silicon; NW FET; Si; channel conductivity; electrolyte; gate dielectric traps; liquid gate; noise characteristics; noise spectroscopy; silicon nanowire field effect transistor biosensor; silicon nanowire field effect transistors; transport characteristics; Current measurement; Dielectrics; Field effect transistors; Logic gates; Noise; Silicon; Voltage measurement; biosensor; electrolyte; noise spectroscopy; open-gate; silicon nanowires;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578984

Filename

6578984