Title :
A 50-W AlGaN/GaN HEMT amplifier
Author :
Wu, Y.-F. ; Chavarkar, P.M. ; Moore, M. ; Parikh, P. ; Keller, B.P. ; Mishra, U.K.
Author_Institution :
Cree Lighting Co., Goleta, CA, USA
Abstract :
A high-power amplifier IC employing an 8-mm-periphery AlGaN/GaN HEMT was successfully demonstrated. The GaN-based device maintained a power density of 6.4 W/mm, enabling a total output power of 51 W at 6 GHz under pulsed operation. This is 6-10 times as high as GaAs-based devices of the same size.
Keywords :
HEMT integrated circuits; aluminium compounds; gallium arsenide; gallium compounds; microwave power amplifiers; power HEMT; 50 W; 6 GHz; 8-mm-periphery; AlGaN-GaN; AlGaN/GaN HEMT amplifier; high-power amplifier IC; output power of 51 W; power density of 6.4 W/mm; pulsed operation; Aluminum gallium nitride; Circuits; Gallium nitride; HEMTs; High power amplifiers; Optical amplifiers; Power amplifiers; Power generation; Power measurement; Pulse amplifiers;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904334
