DocumentCode
2885583
Title
A 50-W AlGaN/GaN HEMT amplifier
Author
Wu, Y.-F. ; Chavarkar, P.M. ; Moore, M. ; Parikh, P. ; Keller, B.P. ; Mishra, U.K.
Author_Institution
Cree Lighting Co., Goleta, CA, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
375
Lastpage
376
Abstract
A high-power amplifier IC employing an 8-mm-periphery AlGaN/GaN HEMT was successfully demonstrated. The GaN-based device maintained a power density of 6.4 W/mm, enabling a total output power of 51 W at 6 GHz under pulsed operation. This is 6-10 times as high as GaAs-based devices of the same size.
Keywords
HEMT integrated circuits; aluminium compounds; gallium arsenide; gallium compounds; microwave power amplifiers; power HEMT; 50 W; 6 GHz; 8-mm-periphery; AlGaN-GaN; AlGaN/GaN HEMT amplifier; high-power amplifier IC; output power of 51 W; power density of 6.4 W/mm; pulsed operation; Aluminum gallium nitride; Circuits; Gallium nitride; HEMTs; High power amplifiers; Optical amplifiers; Power amplifiers; Power generation; Power measurement; Pulse amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904334
Filename
904334
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