Characteristics of AlGaN/GaN HEMT devices with SiN passivation

Author

Jong-Soo Lee ; Vescan, A. ; Wieszt, A. ; Dietrich, R. ; Leier, H. ; Young-Se Kwon

Author_Institution

Res. & Technol., Daimler-Chrysler AG, Ulm, Germany

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

381

Lastpage

384

Abstract

This paper demonstrates the effect of surface passivation on the DC and L-band power characteristics of doped AlGaN/GaN HEMT devices. Drain current and transconductance of AlGaN/GaN increase from 610 mA/mm to 690 mA/mm and 15O mS/mm to 170 mS/mm, whereas other measurements such as Hall and TLM show little change with SiN passivation. Output power dramatically increases from 0.59 W/mm to 1.45 mW/mm. The influence of the SiN layer on the bias dependence of the RF-output power is investigated.

Keywords

aluminium compounds; gallium compounds; high electron mobility transistors; passivation; silicon compounds; 0.59 W/mm to 1.45 mW/mm; AlGaN-GaN; AlGaN/GaN HEMT devices; Hall; L-band power characteristics; RF-output power; SiN; SiN passivation; TLM; bias dependence; doped AlGaN/GaN HEMT devices; drain current 610 mA/mm to 690 mA/mm; surface passivation; transconductance 15O mS/mm to 170 mS/mm; Aluminum gallium nitride; Charge carrier density; Gallium nitride; HEMTs; Passivation; Power generation; Radio frequency; Silicon compounds; Substrates; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904336

Filename

904336