Title :
Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors
Author :
Chumbes, E.M. ; Smart, J.A. ; Prunty, T. ; Shealy, J.R.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Metal-insulator semiconductor field effect transistors (MISFETs) from surface-passivated undoped AlGaN/GaN heterostructures were fabricated on sapphire using a gate-window process that does not severely impact its performance. Measured static output characteristics include full channel currents (I/sub max/) of roughly 750 mA/mm and peak transconductances (g/sub m/) of 100-110 mS/mm. With evidence for reduced DC-to-RF dispersion from gate-lag measurements, these devices at 4 GHz with 28.0 V bias generated maximum output power densities of 4.2 W/mm and 36% power added efficiency. The process when applied to 2-inch wafers produced with high yield 0.6-/spl mu/m MISFETs exhibiting consistent static performance over the whole wafer with a mean I/sub max/ value of 754 mA/mm and a mean g/sub m/ value of 66 mS/mm at an impressive standard deviation <5%.
Keywords :
MISFET; microwave field effect transistors; passivation; sapphire; semiconductor heterojunctions; semiconductor technology; 0.6 mum; 0.6-/spl mu/m MISFET; 100-110 mS/mm; 2 in; 2-inch wafers; 28 V; 28.0 V bias; 36% power added efficiency; 4 GHz; 750 mA/mm; AlGaN/GaN MISFET; MISFET; full channel currents; gate-lag measurements; gate-window process; mean I/sub max/ value 754 mA/mm; mean g/sub m/ value 66 mS/mm; peak transconductances; reduced DC-to-RF dispersion; sapphire; static output characteristics; static performance; surface-passivated AlGaN/GaN heterostructures; Aluminum gallium nitride; Current measurement; FETs; Gallium nitride; Insulation; MISFETs; Metal-insulator structures; Power generation; Rough surfaces; Surface roughness;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904337