Title :
White noise peculiarities in diode structures
Author :
Pralgauskaite, Sandra ; Palenskis, Vilius ; Matukas, Jonas ; Seliuta, Dalius ; Kasalynas, I. ; Valusis, G.
Author_Institution :
Radiophys. Dept., Vilnius Univ., Vilnius, Lithuania
Abstract :
Experimental investigation of low frequency (10 Hz-2 MHz) noise characteristics of different diode structures: Schottky contacts, pn-junctions, and tunnel diodes have been carried out in wide temperature range (77-336 K) in order to verify which one-shot noise or thermal noise in nonlinear resistance - concept of white noise better explains the experimental results. The experimental results have shown that white noise spectra of voltage fluctuations of pn-junction and Schottky diodes with exponential current-voltage characteristic are well described by Gupta formula with ideal and non-ideal current-voltage characteristics. Shot noise is well described by Schottky formula only in the case of ideal current-voltage characteristics. To describe the tunnel diode white noise spectra one needs to include thermal noise of differential resistance of a diode and tunneling shot noise components.
Keywords :
Schottky diodes; semiconductor device noise; shot noise; tunnel diodes; tunnelling; white noise; Gupta formula; Schottky contact diode; diode structure; frequency 10 Hz to 2 MHz; low frequency noise; noise spectra; nonideal current-voltage characteristics; nonlinear resistance; one shot noise; pn-junction diode; temperature 77 K to 336 K; thermal noise; tunnel diode; tunneling shot noise component; voltage fluctuation; white noise; Fluctuations; Gallium arsenide; Schottky diodes; Thermal noise; Thermal resistance; White noise; Gupta theorem; Schottky contact; Schottky formula; pn-junction; shot noise; thermal noise; tunnel diode; white noise;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578988
