Title :
Noise characteristics of AlInN/GaN HEMTs at microwave frequencies
Author :
Nsele, S.D. ; Escotte, Laurent ; Tartarin, J.-G. ; Piotrowicz, S.
Author_Institution :
LAAS, Univ. of Toulouse (UPS), Toulouse, France
Abstract :
The microwave noise parameters measured on AlInN/GaN HEMTs devices with different gate length values are presented in this paper. 0.15-μm HEMTs achieve a maximum current density of 700 mA/mm at VGs = 0 V and a measured extrinsic transconductance of 350 mS/mm. The current gain cutoff frequency and the maximum oscillation frequency are 40 GHz and 70 GHz, respectively. At 10 (20) GHz, the device exhibits a minimum noise figure of 0.8 dB (1.8) dB with an associated power gain of 14 (8.8) dB. Below 8 GHz, the gate leakage current and a generation-recombination noise source with a very short time constant limit the noise performance.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; microwave transistors; AlInN-GaN; HEMT device; current density; current gain cutoff frequency; extrinsic transconductance measurement; frequency 10 GHz; frequency 40 GHz; frequency 70 GHz; gate leakage current; generation-recombination noise source; microwave frequencies; microwave noise parameters; noise figure; noise figure 0.8 dB; oscillation frequency; size 0.15 mum; Gain; Gallium nitride; HEMTs; Logic gates; MODFETs; Noise; Noise figure; AlInN/GaN HEMTs; microwave noise parameters;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578989
