A low-distortion 230 W GaAs power FP-HFET operated at 22 V for cellular base station

Author

Matsunaga, K. ; Ishikura, K. ; Takenaka, I. ; Contrata, W. ; Wakejima, A. ; Ota, K. ; Kanamori, M. ; Kuzuhara, M.

Author_Institution

Syst. Devices & Fundamental Res., NEC Corp., Shiga, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

393

Lastpage

396

Abstract

This paper describes a successfully developed L-band depletion-mode GaAs-based heterostructure FET (HFET) with a field-modulating plate (FP) for cellular base station applications. The FP-HFET power amplifier, consisting of four 86.4 mm gate-width chips, delivered a 53.6 dBm (230 W) output power at 2.1 GHz with 11 dB linear gain and 42% PAE operated at a drain bias of 22 V. A low adjacent channel leakage power ratio (ACPR) of -35 dBc with 25% PAE was obtained at an output power of 46 dBm, indicating superior linearity characteristics under elevated drain bias conditions. The device also exhibited a record saturated power density of 0.67 W/mm.

Keywords

III-V semiconductors; cellular radio; field effect integrated circuits; field effect transistors; gallium arsenide; microwave integrated circuits; microwave power amplifiers; semiconductor device measurement; 11 dB; 11 dB linear gain; 2.1 GHz; 22 V; 230 W; 230 W GaAs; 230 W output power; 42% PAE; 86.4 mm; 86.4 mm gate-width chips; GaAs; GaAs-based heterostructure FET; L-band depletion-mode; cellular base station; cellular base station applications; drain bias 22 V; field-modulating plate; leakage power ratio; linearity characteristics; output power 46 dBm; power FP-HFET; saturated power density 0.67 W/mm; Base stations; FETs; Gain; Gallium arsenide; HEMTs; L-band; Linearity; MODFETs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904339

Filename

904339