DocumentCode
2885680
Title
Mechanically temperature-compensated flexural-mode micromechanical resonators
Author
Wan-Thai Hsu ; Clark, J.R. ; Nguyen, C.T.-C.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
399
Lastpage
402
Abstract
An IC-compatible, high frequency (HF), lateral micromechanical resonator supported by a mechanical structure designed to introduce stresses that counteract temperature-induced frequency shifts, has been demonstrated at 10 MHz with a much-reduced temperature coefficient of -2.5 ppm//spl deg/C and a Q of greater than 10,000. These values constitute substantial improvements over the -17 ppm//spl deg/C and 3,000 posted by previous clamped-clamped beam vertical resonators in this frequency range, and represent significant strides towards reducing the thermal dependence of micromechanical resonators, possibly to the point where such devices can be used in on-chip high-and reference oscillator applications without the need for electronic temperature compensation.
Keywords
compensation; micromachining; micromechanical resonators; 10 MHz; clamped-clamped beam vertical resonators; flexural-mode micromechanical resonators; lateral micromechanical resonator; micromechanical resonators; on-chip high-and reference oscillator; temperature coefficient; temperature compensation; temperature-induced frequency shifts; thermal dependence; Electrodes; Instruments; Micromechanical devices; Oscillators; Resonant frequency; Temperature dependence; Temperature distribution; Thermal stresses; Transceivers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904340
Filename
904340
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