• DocumentCode
    2885680
  • Title

    Mechanically temperature-compensated flexural-mode micromechanical resonators

  • Author

    Wan-Thai Hsu ; Clark, J.R. ; Nguyen, C.T.-C.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    2000
  • fDate
    10-13 Dec. 2000
  • Firstpage
    399
  • Lastpage
    402
  • Abstract
    An IC-compatible, high frequency (HF), lateral micromechanical resonator supported by a mechanical structure designed to introduce stresses that counteract temperature-induced frequency shifts, has been demonstrated at 10 MHz with a much-reduced temperature coefficient of -2.5 ppm//spl deg/C and a Q of greater than 10,000. These values constitute substantial improvements over the -17 ppm//spl deg/C and 3,000 posted by previous clamped-clamped beam vertical resonators in this frequency range, and represent significant strides towards reducing the thermal dependence of micromechanical resonators, possibly to the point where such devices can be used in on-chip high-and reference oscillator applications without the need for electronic temperature compensation.
  • Keywords
    compensation; micromachining; micromechanical resonators; 10 MHz; clamped-clamped beam vertical resonators; flexural-mode micromechanical resonators; lateral micromechanical resonator; micromechanical resonators; on-chip high-and reference oscillator; temperature coefficient; temperature compensation; temperature-induced frequency shifts; thermal dependence; Electrodes; Instruments; Micromechanical devices; Oscillators; Resonant frequency; Temperature dependence; Temperature distribution; Thermal stresses; Transceivers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-6438-4
  • Type

    conf

  • DOI
    10.1109/IEDM.2000.904340
  • Filename
    904340