Title :
1/f noise of MWIR Hg0.7Cd0.3 Te eAPD´s used in a focal plane array
Author :
Souici, T. ; Orsal, B. ; Kayian, J. ; Foltz, J.
Author_Institution :
IES, UM2, Montpellier, France
Abstract :
We show for the first time, the results concerning low frequency noise (1Hz-1KHz) of Avalanche Photodiodes (eAPDs) HgCdTe manufactured on Cadmium Telluride Substrate (CdTe). 1/f and multiplication noises are increasing as a function of the multiplication coefficient with the same variation. This specific behavior is explained taking into account the physical properties of eAPDs, electron avalanche multiplication coefficient and excess noise slope coefficient versus dark current. Noise Equivalent Power of median wave infrared optoelectronic detector is proposed taking account into 1/f noise which is predominant in this optical bandwidth.
Keywords :
1/f noise; II-VI semiconductors; avalanche photodiodes; cadmium compounds; focal planes; infrared detectors; mercury compounds; optoelectronic devices; semiconductor device noise; 1/f noise; CdTe; Hg0.7Cd0.3Te; MWIR eAPD; avalanche photodiodes; cadmium telluride substrate; dark current; electron avalanche multiplication coefficient; excess noise slope coefficient; focal plane array; low frequency noise; median wave infrared optoelectronic detector; multiplication coefficient function; multiplication noises; noise equivalent power; Avalanche photodiodes; Dark current; Integrated optics; Optical noise; Optical sensors; White noise; 1/f noise; avalanche photodiode; corner frequency; excess noise coefficient; noise equivalent power; white noise;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578995
