Ultra shallow junction profiling

Highly precise (few %) and spatially (depth and laterally) resolved (nm) measurements of dopant and carrier distributions are required to establish the actual relation between the final dopant/carrier distribution and processing steps. This paper provides a review of recent progress in the field of dopant and carrier profile characterization. Factors limiting the final accuracy and depth resolution of SIMS and spreading resistance probe are discussed in combination with recent developments such as the Nanoprofiler and Carrier Illumination which may go to the sub-nm limit. Quantitative 2D-carrier profiling is dominated by scanning probe techniques but is still limited in spatial resolution (/spl sim/10 nm).