Title :
MOS pass transistors with reduced transient error charge
Author :
kuo, jay ; Chong-Cheng Fu ; Dameron, D. ; Dutton, Rachael ; Wooley, B.
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
A two-lump model, developed for MOS pass transistors, to represent the turnoff transient error charge, will be described. Reduction of this error by 90% will be cited for a circular transistor structure.
Keywords :
Capacitors; Charge measurement; Circuit simulation; Clocks; Current measurement; Doping; Electron devices; Geometry; MOSFETs; Semiconductor process modeling;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/ISSCC.1986.1157005
