Title :
Submicron MOSFET performance at liquid nitrogen temperatures
Author :
Ogura, Shotaroh ; Kroesen, P. ; Codella, C. ; Rovedo, N. ; Cheung, Stephane
Author_Institution :
IBM, Hopewell Junction, NY, USA
Abstract :
Conclusions of a study on submicron silicon gate MOSFET performance, indicating that 0.5μm devices operating at liquid nitrogen temperatures afford twice the speed and reduced sensitivity to power supply voltage than sub-0.25μm devices at room temperatures, will be discussed. Test devices using double-implanted lightly-doped drains were used in the anaylsis.
Keywords :
Capacitance; Electrons; Logic devices; MOSFET circuits; Nitrogen; Power supplies; Semiconductor process modeling; Temperature; Threshold voltage; Transconductance;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/ISSCC.1986.1157006
