• DocumentCode
    2885835
  • Title

    Submicron MOSFET performance at liquid nitrogen temperatures

  • Author

    Ogura, Shotaroh ; Kroesen, P. ; Codella, C. ; Rovedo, N. ; Cheung, Stephane

  • Author_Institution
    IBM, Hopewell Junction, NY, USA
  • Volume
    XXIX
  • fYear
    1986
  • fDate
    19-21 Feb. 1986
  • Firstpage
    160
  • Lastpage
    161
  • Abstract
    Conclusions of a study on submicron silicon gate MOSFET performance, indicating that 0.5μm devices operating at liquid nitrogen temperatures afford twice the speed and reduced sensitivity to power supply voltage than sub-0.25μm devices at room temperatures, will be discussed. Test devices using double-implanted lightly-doped drains were used in the anaylsis.
  • Keywords
    Capacitance; Electrons; Logic devices; MOSFET circuits; Nitrogen; Power supplies; Semiconductor process modeling; Temperature; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
  • Conference_Location
    Anaheim, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1986.1157006
  • Filename
    1157006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2885835