Title :
A 140 GHz ft and 60 GHz fmax DTMOS integrated with high-performance SOI logic technology
Author :
Momiyama, Y. ; Hirose, T. ; Kurata, H. ; Goto, K. ; Watanabe, Y. ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We integrated an RF-nMOSFET with 130-nm SOI high-end logic technology. Using the dynamic threshold structure (DTMOS) and channel engineering, we obtained an ft of 140 GHz and an fmax of 60 GHz when Vgs=0.65 V and Vds=1.5 V, while the logic CMOS showed Ion-Ioff characteristics better than those reported for SOI-CMOS devices. The RF characteristics were analyzed using a newly developed small-signal equivalent circuit model that has an additional current source to express the body contribution of the DTMOS. These analyses revealed that channel engineering is important in improving RF performances.
Keywords :
CMOS integrated circuits; equivalent circuits; field effect MMIC; integrated circuit modelling; mixed analogue-digital integrated circuits; silicon-on-insulator; 0.65 V; 1.5 V; 130 nm; 140 GHz; 60 GHz; DTMOS; Ion-Ioff characteristics; RF characteristics; RF-nMOSFET; Si; body contribution; channel engineering; dynamic threshold structure; high-end logic technology; high-performance SOI logic technology; logic CMOS; small-signal equivalent circuit model; CMOS logic circuits; CMOS technology; Fabrication; Laboratories; Logic devices; MOS devices; MOSFETs; Pulse measurements; Radio frequency; Substrates;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904353
